| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device which improves the flatness of the upper surface of an element isolation film and that of a conductive film when the conductive film is buried in the element isolation film. SOLUTION: The manufacturing method for the semiconductor device includes a step of burying the element isolation film 2 in a semiconductor substrate 1, a step of forming a trench 2a on the element isolation film 2, a step of forming a first conductive film 20 in the trench 2a and on the element isolation film 2, a step of forming a first mask film 51 on the first conductive film 20 located in the trench 2a, a step of removing the first conductive film 20 located on the element isolation film 2 by etching using the first mask film 51 as a mask, and a step of eliminating the first mask film 51. It is preferable that the depth of the trench 2a is approximately the same as the thickness of the first conductive film 20. COPYRIGHT: (C)2008,JPO&INPIT
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