发明名称 |
NONVOLATILE SEMICONDUCTOR STORAGE APPARATUS AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage apparatus including: a substrate; a columnar semiconductor disposed perpendicular to the substrate; a charge storage laminated film disposed around the columnar semiconductor; a first conductor layer that is in contact with the charge storage laminated film and that has a first end portion having a first end face; a second conductor layer that is in contact with the charge storage laminated film, that is separated from the first conductor layer and that has a second end portion having a second end face; a first contact plug disposed on the first end face; and a second contact plug disposed on the second end face.
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申请公布号 |
US2008099819(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20070874004 |
申请日期 |
2007.10.17 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KITO MASARU;INOUE HIROFUMI |
分类号 |
H01L29/788;H01L21/8239;H01L21/8247 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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