| 摘要 |
Methods and apparatus are provided for programming a flash multiple level memory cell (MLC) memory. The method may include loading data into an SRAM. The method may include reading a plurality of multiple-bit words from the data in the SRAM and loading the words into at least one latch buffer of a power control circuit. The method may also include pairing one or more bits from one of the words in the latch buffer with one or more bits from another of the words in the latch buffer and determining which of the bit pairs require programming. Moreover, the method may include programming, in parallel, each memory cell with the determined bit pairs. The method may further include programming each multiple level memory cell by applying a voltage to the drain side of a transistor of the memory cells corresponding to the determined bit pairs.
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