| 摘要 |
A method is provided for patterning monolithically integrated features having a 1:1 ratio. The method comprises forming a first etch barrier layer ( 18 ) over a base layer ( 14 ) and applying ( 52 ) a template ( 20 ) to pattern ( 52 ) first printed features ( 26 ) in the first etch barrier layer ( 18 ). The first etch barrier layer ( 18 ) is etched ( 54 ) to form second printed features ( 32 ) in the base layer ( 14 ). A second etch barrier layer ( 34 ) is formed over the base layer ( 14 ) and the template ( 20 ) is applied to pattern ( 58 ) third printed features ( 38 ) in the second etch barrier layer ( 34 ). The second etch barrier layer ( 34 ) is etched ( 60 ) to form fourth printed features ( 42 ) in the base layer ( 14 ).
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