| 摘要 |
PROBLEM TO BE SOLVED: To achieve integration of a DRAM and a logic integrated circuit into a single semiconductor integrated circuit device having a system-on-chip structure while maintaining both the performance of the DRAM and that of the logic integrated circuit. SOLUTION: In a semiconductor integrated circuit device having a system-on-chip structure, in which a DRAM and a logic integrated circuit are mounted mixedly, a silicide layer 20 is provided on the surfaces of a source and a drain (13, 14) of MISFETs (Qn<SB>1</SB>, Qp<SB>1</SB>) constituting a direct peripheral circuit of the DRAM, on the surfaces of a source and a drain of MISFETs constituting an indirect peripheral circuit, and on the surfaces of a source and a drain (17, 19) of MISFETs (Qn<SB>2</SB>, Qp<SB>2</SB>) constituting the logic integrated circuit. No silicide layer is provided on the surfaces of a source and a drain (9) of a memory cell selection MISFET (Qs) constituting a memory cell of the DRAM. COPYRIGHT: (C)2008,JPO&INPIT
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