发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING IT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming wiring which is electrically connected to a lower region through a contact. SOLUTION: The method for forming the wiring includes steps of: forming an insulating film on a substrate which has a plurality of first regions and a plurality of second regions which are arranged between the first regions; forming a plurality of first wiring on the insulating film which are connected electrically to the corresponding first regions through first contacts penetrating the insulating film; forming spacers on side faces of the first wiring; removing the insulating film positioned between the adjacent spacers so as to form a plurality of contact holes in which the corresponding second regions are exposed between the adjacent first contacts; and forming a plurality of second contacts which are filled in the corresponding contact holes to form a plurality of second wiring which are connected electrically to the corresponding second contacts. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008103729(A) |
申请公布日期 |
2008.05.01 |
申请号 |
JP20070271758 |
申请日期 |
2007.10.18 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KWAK DONG-HWA;PARK JAE-KWAN;SIM JAE-HWANG;KIM JIN-HO;KIM KI-NAM |
分类号 |
H01L21/768;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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