发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING IT
摘要 PROBLEM TO BE SOLVED: To provide a method for forming wiring which is electrically connected to a lower region through a contact. SOLUTION: The method for forming the wiring includes steps of: forming an insulating film on a substrate which has a plurality of first regions and a plurality of second regions which are arranged between the first regions; forming a plurality of first wiring on the insulating film which are connected electrically to the corresponding first regions through first contacts penetrating the insulating film; forming spacers on side faces of the first wiring; removing the insulating film positioned between the adjacent spacers so as to form a plurality of contact holes in which the corresponding second regions are exposed between the adjacent first contacts; and forming a plurality of second contacts which are filled in the corresponding contact holes to form a plurality of second wiring which are connected electrically to the corresponding second contacts. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008103729(A) 申请公布日期 2008.05.01
申请号 JP20070271758 申请日期 2007.10.18
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KWAK DONG-HWA;PARK JAE-KWAN;SIM JAE-HWANG;KIM JIN-HO;KIM KI-NAM
分类号 H01L21/768;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/768
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