| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of fully siliciding a gate electrode with a higher reliability, and to provide a manufacturing method thereof. SOLUTION: An element separation region 12 having an upper surface higher than an active region 11 is formed on a semiconductor substrate 10, and then, a film 14 for forming a gate interconnection and a film 15 for forming a protective film are formed on the active region 11 and the element separation region 12. Then, the film 15 for forming the protective film is ground and made to be flat. Furthermore, patterning is performed to form a gate electrode part 14a, a gate interconnection part 14b, and protective films 15a, 15b. Then, side walls 17 are formed. COPYRIGHT: (C)2008,JPO&INPIT
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