SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of narrowly forming a hetero-semiconductor region and capable of reducing a leakage current from the hetero-semiconductor region, and to provide a manufacturing method for the semiconductor device. SOLUTION: The semiconductor device has N+ type polycrystalline silicon 4 formed on the side face of an insulator region 3 formed in the specified region of the surface of an N- type silicon-carbide epitaxial layer 2 in a side wall shape from polycrystalline silicon having a band-gap width different from an N+ type silicon-carbide base body 1 and the N- type silicon-carbide epitaxial layer 2. The semiconductor device further has a gate insulating film 6 formed on the surface of the N- type silicon-carbide epitaxial layer 2 and the side face of N+ type polycrystalline silicon 4 and a gate electrode 7 formed while being brought into contact with the gate insulating film 6. The semiconductor device further has a source electrode 9 connected to N+ type polycrystalline silicon 4 and a drain electrode 10 connected to the N+ type silicon-carbide base body 1. COPYRIGHT: (C)2008,JPO&INPIT