发明名称 MEMS AND SEMICONDUCTOR COMPOSITE CIRCUIT, AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To implement a structure which facilitates flattening of a layered structure arranged on a semiconductor base board, and is proof against mutual influence between an element structure of a semiconductor element portion and an MEMS structure. SOLUTION: An MEMS and semiconductor composite circuit has the semiconductor base board 10, and the MEMS structure 30S and the semiconductor element portion 20 arranged on a front layer of the semiconductor base board. The front layer of the semiconductor base board has formed therein: an MEMS trench structure 31 consisting of a surface recess for element isolation of the MEMS structure from the semiconductor base board, and an insulator arranged inside the same; and boundary trench structures 21 each consisting of a surface groove formed in an element boundary portion for element isolation of the semiconductor element portion, and an isolator arranged inside the same. Herein a surface 32a of the isolator 31d inside the MEMS trench structure is set lower than a base board surface 10a of the semiconductor base board, and the MEMS structure is formed on the surface of the isolator. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008100325(A) 申请公布日期 2008.05.01
申请号 JP20060286031 申请日期 2006.10.20
申请人 SEIKO EPSON CORP 发明人 SATO AKIRA;WATANABE TORU;INABA SHOGO;MORI TAKASHI
分类号 B81B7/02;B81C1/00;H01L21/76;H01L29/84 主分类号 B81B7/02
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