发明名称 |
Apparatus and Method For Regional Plasma Control |
摘要 |
An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.
|
申请公布号 |
US2008100214(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20060553590 |
申请日期 |
2006.10.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG SHIH MING;LU CHI-LUN |
分类号 |
H01J61/12;H01J17/20 |
主分类号 |
H01J61/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|