发明名称 Apparatus and Method For Regional Plasma Control
摘要 An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.
申请公布号 US2008100214(A1) 申请公布日期 2008.05.01
申请号 US20060553590 申请日期 2006.10.27
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHANG SHIH MING;LU CHI-LUN
分类号 H01J61/12;H01J17/20 主分类号 H01J61/12
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