| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CMOS image sensor that can obtain of an on-chip signal processing circuit, capable of improving photosensitivity and maintaining high frequency characteristics while reducing blooming and a color mixture. <P>SOLUTION: A solid-state image pickup device is provided with an image pickup region that has a plurality of N-type semiconductor regions 3 which execute photoelectric conversion, and each P-type semiconductor region 5 for element separation which is formed around each N-type semiconductor region, on an N/P semiconductor substrate formed by depositing an N-type semiconductor layer 2 on a P-type semiconductor substrate 1. The solid-state image pickup device also has a P-type semiconductor layer 6 which is formed in the N-type semiconductor layer 2 in the image pickup region so as to divide the N-type semiconductor layer 2 into two parts of an upper layer and a lower layer, and each N-type semiconductor region 7 provided so as to be connected from the surface of the N/P semiconductor substrate to the P-type semiconductor substrate 1 in a peripheral region of the image pickup region. <P>COPYRIGHT: (C)2008,JPO&INPIT |
