| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor power module having a structure in which a group III nitride semiconductor power transistor is housed in a package, capable of preventing cracks in the group III nitride semiconductor power transistor formed on the substrate by solder. SOLUTION: The power module includes a group III nitride semiconductor element 20 made of a group III nitride semiconductor grown on a sapphire substrate 21 having a thickness of ≥300 μm, a heat sink 11 mounted with the semiconductor element 20, and the solder 13 having a melting point of ≥300°C used for joining the heat sink 11 to the semiconductor element 20. With this configuration, cracks of the semiconductor element 20 can be prevented. COPYRIGHT: (C)2008,JPO&INPIT
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