SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor (TFT) which is excellent in flatness of a gate insulating film and its manufacturing method. SOLUTION: The semiconductor device is constructed in a manner such that a channel is located in an insulator layer on a substrate 10, a gate electrode 12 is formed in its channel so that its surface is substantially flush with the surface of the insulator layer, a semiconductor layer 14 is positioned on the gate electrode 12 through a gate insulating film 13, and at least one of a source electrode 15 and drain electrode is electrically connected to the semiconductor layer. The gate insulating film 13 includes an insulator coating film 131 located on the gate electrode 12 and an insulator CVD film 132 formed thereon. COPYRIGHT: (C)2008,JPO&INPIT