发明名称 |
REDUCED LEAKAGE INTERCONNECT STRUCTURE |
摘要 |
An improved semiconductor device interconnect structure comprising a dielectric layer recessed with respect to the conductive interconnect features. This structure and method reduces embedded metallic residues from CMP scratches and metal cap applications and provides improved mechanical integrity at the capping layer/liner/dielectric interface.
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申请公布号 |
US2008102599(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20060554612 |
申请日期 |
2006.10.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG CHIH-CHAO |
分类号 |
H01L21/76;H01L29/06;H01L29/40 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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