| 摘要 |
A method of manufacturing a non-volatile memory device includes forming a trench using the shallow trench isolation (STI) method; forming a first insulating layer on a semiconductor device including the trench; forming a conductive layer on the semiconductor device including the trench; etching the conductive layer to form a conductive layer for a floating gate on an active area and to form a recessed gap-fill conductive layer on an isolation layer; forming a second insulating layer and a third insulating layer on the semiconductor substrate including the gap fill conductive layer and the conductive layer for the floating gate; and etching a portion of the second insulating layer and the third insulating layer to form an isolation structure consisting of the gap fill conductive layer, the second insulating layer and the third insulating layer on the isolation area.
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