| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which minimizes the ununiformity in emission wavelength of an active layer having a multi-quantum well structure, and minimizes decreasing in light-emitting efficiency. <P>SOLUTION: This semiconductor light emitting device includes an n type contact layer 200 formed on a substrate 100, the active layer 250 which is formed on the n type contact layer 200 and constituted of two or more quantum well layers and two or more barrier layers, and a p type contact layer 300 formed on the active layer 250, wherein the energy band gap because of a quantum well layer becomes larger, the closer to the n type contact layer 200, and/or the thickness of the quantum well layer becomes thinner, the closer to the n type contact layer 200 and/or the energy band gap because of a barrier layer becomes larger, the closer to the n type contact layer 200. <P>COPYRIGHT: (C)2008,JPO&INPIT |
