发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which allows a load to become in a stable state in a short period of time. <P>SOLUTION: For example, a constant current circuit IS is set, which is provided with a startup circuit ST-UP, a current bias circuit IBIAS, a temperature correction circuit T-CPS, switch circuits SW1 and SW2, precharge circuits PC1 and PC2, and PMOS transistors MP1 and MP2. The ST-UP receives an enable signal EN and generates a one-shot pulse. The IBIAS drives a gate of the MP1 to generate current I1 provided with, for example, a positive temperature characteristic. The T-CPS drives a gate of the MP2 to generate current I2 provided with, for example, a negative temperature characteristic. The SW1 and SW2 interrupt the power of the IBIAS and the T-CPS when the EN is inactive. The PC1 and PC2 receive the one-shot pulse signal from the ST-UP and overdrives the MP1 and MP2 for a fixed period. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008103943(A) 申请公布日期 2008.05.01
申请号 JP20060284124 申请日期 2006.10.18
申请人 RENESAS TECHNOLOGY CORP 发明人 SHIRAI MASARU;FUKUOKA KAZUKI;TAGUCHI YASURO;SASAKI TOSHIO;KURAISHI TAKASHI
分类号 H03K19/017;G05F1/56;H03K17/04;H03K17/687;H03K19/0175 主分类号 H03K19/017
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