发明名称 PLASMA ETCHING MACHINING METHOD AND METHOD OF MANUFACTURING LIQUID INJECTION HEAD
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma etching machining method capable of machining a substrate continuously and precisely by using a plasma etching device for performing the dry etching of the substrate, and to provide a method of manufacturing a liquid injection head using the plasma etching machining method. <P>SOLUTION: There are provided: a process for forming a protective film 201 having an opening of prescribed dimensions on the substrate; and an etching process for performing dry etching to the substrate by the plasma etching device with the protective film 201 as a mask. A Vpp value of an electrode in the plasma etching device is measured under the etching process, and a setting Vpp value set in each etching process is adjusted based on a measurement Vpp value measured in a previous etching process. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008103428(A) 申请公布日期 2008.05.01
申请号 JP20060283059 申请日期 2006.10.17
申请人 SEIKO EPSON CORP 发明人 TANAKA SHINICHI
分类号 H01L21/3065;B41J2/045;B41J2/055;B41J2/135;H05H1/46 主分类号 H01L21/3065
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