| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon dioxide precursor and a silicon dioxide precursor composition useful to form a silicon dioxide film of high purity without containing an organic component. SOLUTION: This silicon dioxide precursor is represented by following rational formula (1): (H<SB>2</SB>SiO)<SB>n</SB>(HSiO<SB>1.5</SB>)<SB>m</SB>(SiO<SB>2</SB>)<SB>k</SB>(1) (wherein n, m and k are numbers respectively, and when n+m+k=1, n is≥0.5, m is >0 and≤0.3, and k is 0 to 0.2), and is a silicone resin of a solid state at 120°C. The silicon dioxide precursor composition comprises the silicone resin and an organic solvent. COPYRIGHT: (C)2008,JPO&INPIT
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