| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing an SiC single crystal in which a high-quality SiC single crystal having a large aperture can be continuously grown at a low cost with stability. SOLUTION: The SiC single crystal is produced by a liquid phase growth method for epitaxially growing SiC on a substrate by bringing a seed crystal substrate into contact with an SiC solution in which a melt of an Si alloy held in a crucible is used as a solvent, wherein a sapphire crystal substrate is used as the seed crystal substrate. The solvent is an Si-Al alloy or an Si-Al-M alloy (wherein M is one or more additional elements selected from among Ti, Mn, Fe, Co, Cr, Cu, and V). COPYRIGHT: (C)2008,JPO&INPIT
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