发明名称 Memory circuit, semiconductor device and read control method of memory circuit
摘要 A memory circuit of the invention comprises N look-up tables for implementing a desired logic function of L inputs/M outputs by partitioning a memory cell array including a plurality of memory cells into portions each corresponding to at least a predetermined number of input/output paths; a decode circuit for selecting one of the N look-up tables by decoding a look-up table select signal and for selecting M memory cells to be accessed included in the selected look-up table by decoding an L-bit logic input signal of the logic function; and a select connect circuit for selectively connecting the input/output paths of the M memory cells to be accessed with an input/output bus for transmitting an M-bit logic output signal of the logic function in response to a decoded result of the decode circuit.
申请公布号 US2008100337(A1) 申请公布日期 2008.05.01
申请号 US20070976853 申请日期 2007.10.29
申请人 ELPIDA MEMORY, INC. 发明人 KAJIGAYA KAZUHIKO
分类号 H03K19/173 主分类号 H03K19/173
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