发明名称
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing technology for improving an emission property of a cold cathode electron source. <P>SOLUTION: An electron emission part 3 including carbon nanotubes (CNTs) 4 and carbon impurities 5 is formed on a cathode electrode 2. The CNTs 4 are exposed from the impurities 5 by irradiating the laser to the emission part 3 at a irradiation density of 0.7-8.6 MW/cm<SP>2</SP>. Thereby, the CNTs 4, which are in horizontally lying states before irradiation of the laser, are raised and an emission property of the electron source is improved. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP4083611(B2) 申请公布日期 2008.04.30
申请号 JP20030081854 申请日期 2003.03.25
申请人 发明人
分类号 B82B3/00;H01J9/02 主分类号 B82B3/00
代理机构 代理人
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