| 发明名称 |
TECHNIQUE FOR EFFICIENTLY PATTERNING AN UNDERBUMP METALLIZATION LAYER USING A TWO-STEP CLEANING PROCESS |
| 摘要 |
The production of a contact layer involves structuring a first layer of a bump bottom face metallization layer stack by electrochemical etching in the presence of several bumps formed on the bump bottom face metallization layer stack and then structuring a second layer of the bump bottom face metallization layer stack by dry etching. |
| 申请公布号 |
EP1915776(A2) |
申请公布日期 |
2008.04.30 |
| 申请号 |
EP20060787978 |
申请日期 |
2006.07.20 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KUECHENMEISTER, FRANK;PLATZ, ALEXANDER;JUNGNICKEL, GOTTHARD;SIURY, KERSTIN |
| 分类号 |
H01L21/60;C25F3/02;H01L21/3213;H01L23/485;H05K3/34 |
主分类号 |
H01L21/60 |
| 代理机构 |
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