| 摘要 |
Disclosed is a polishing composition containing a protective film-forming agent, an oxidizing agent and an etching agent. The protective film-forming agent contains at least one compound selected from selected from benzotriazoles and benzotriazole derivatives, and at least one compound selected from the compounds represented by the following general formula: ROR'COOH and the following general formula: ROR'OPO3H2 (wherein R represents an alkyl group or an alkylphenyl group, and R' represents a polyoxyethylene group, a polyoxypropylene group or a poly(oxyethylene-oxypropylene) group). The pH of the polishing composition is not less than 8. This polishing composition can be suitably used in polishing performed for forming wiring in a semiconductor device. |
