| 摘要 |
This invention relates to a beam stop 100 for an ion implanter that provides a measure of the ion beam current incident thereon and that may be used for ion beam optimisation. A beam stop 100 for an ion implanter is provided comprising a charge collector 112 with a segmented surface provided to receive an ion beam A thereon, wherein the surface is divided into at least two segments, one segment extending around the other segment, and wherein each of the two segments is operable to provide one or more signals indicative of charge collected by that segment when an ion beam A is incident thereon. Such a beam stop 100 is advantageous as it provides information on the ion beam profile without the need to scan the ion beam. |
