TERMINATION STRUCTURE,申请号KR20087006620-传众专利搜索

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法人/股东/高管

发明名称	TERMINATION STRUCTURE
摘要	A power semiconductor device having a termination structure that includes a polysilicon field plate, a metallic field plate, and a polysilicon equipotential ring.
申请公布号	KR20080037725(A)	申请公布日期	2008.04.30
申请号	KR20087006620	申请日期	2006.09.15
申请人	INTERNATIONAL RECTIFIER CORPORATION	发明人	CAO JIANJUN;AMANI NAZANIN
分类号	H01L23/58	主分类号	H01L23/58
代理机构		代理人
主权项
地址

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