发明名称 |
Carbon filament memory and fabrication method |
摘要 |
<p>An integrated circuit is described, including a memory element including a first carbon layer rich in a first carbon material and a second carbon layer rich in a second carbon material. The memory element stores information by reversibly forming a conductive channel in the second carbon layer, wherein the conductive channel includes the first carbon material.</p> |
申请公布号 |
EP1916722(A2) |
申请公布日期 |
2008.04.30 |
申请号 |
EP20070119159 |
申请日期 |
2007.10.24 |
申请人 |
QIMONDA AG |
发明人 |
KREUPL, FRANZ;KUND, MICHAEL;UFERT, KLAUS-DIETER |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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