| 摘要 |
<p>A non-volatile memory having three kinds of states and a method for manufacturing the same are provided to manufacture a memory with high capacity and increase integration degree. A non-volatile memory having three kinds of states comprises a silicon substrate(300), a floating gate(326), a tunnel oxide layer, a strong dielectric, a diffusion barrier layer, a control gate(324), a gate insulation layer, spacers(334), a P-type junction region(330), and source/drain regions(336). The floating gate is formed on the substrate. The tunnel oxide layer is interposed between the silicon substrate and the floating gate. The strong dielectric is interposed between the silicon substrate inside the tunnel oxide layer and the floating gate. The diffusion barrier layer encloses the strong dielectric. The control gate is formed on the substrate including the floating gate. The gate insulation layer is formed at a lower portion of the control gate. The spacers are formed at both sidewalls of the floating gate and the control gate. The P-type junction region is formed on a drain formation region of the substrate. The drain/source regions are formed in a surface of the substrate of both sides of the control gate including the spacers.</p> |
