METHOD FOR FORMING FILM OF GROUP III NITRIDE SUCH AS GALLIUM NITRIDE

摘要

[PROBLEM TO BE SOLVED] To film deposit a group III nitride such as GaN using atmospheric pressure plasma. [SOLVING MEANS] A reactor chamber 12 is filled with a pure nitrogen of approximately atmospheric pressure of about 40 kPa. A c-face sapphire substrate 90 is placed on an electrode 14. The substrate temperature is brought to 650 degree centigrade by a heater 15. An electric field is applied between electrodes 13, 14 to form a discharge space 11a therebetween. In a gas feed system 20, a small quantity of trimethylgallium is added to N 2 , the resultant is fed into a discharge space 11a and brought into contact with the sapphire substrate 90. A V/III ratio on the substrate 90 is brought into a range of from 10 to 100000.