| 摘要 |
A semiconductor device comprising silicon single-crystal substrate (101), silicon carbide layer (102) superimposed on a surface of the substrate, Group III nitride semiconductor junction layer (103) disposed in contact with the silicon carbide layer and superlattice structure layer (104) constituted of a Group III nitride semiconductor and superimposed on the Group III nitride semiconductor junction layer, wherein the silicon carbide layer is a layer of cubical crystal with a greater than 0.436 nm but not greater than 0.460 nm lattice constant, the layer being one of nonstoichiometrical composition enriched with silicon, and wherein the Group III nitride semiconductor junction layer has a composition of the formula AlXGaYInZN1-EM E (0 <= X,Y,Z <= 1, X+Y+Z=1, 0 <= E < 1 and M is any of Group V elements other than nitrogen). |
