发明名称 |
WAFER-LEVEL BURN-IN METHOD AND WAFER-LEVEL BURN-IN SYSTEM |
摘要 |
A temperature regulation plate (106) is divided into at least two areas, a heater (408) for applying a temperature load in correspondence with such areas and its control system are divided and controlled independently to set temperatures, and a cooling source is controlled by comparing the measurements from temperature sensors (409) arranged in respective areas for controlling the heater (408) and switching the measurement for calculating the control output sequentially thus reducing variation in in-plane temperature of a wafer due to heating when an electric load is applied. Since consumption and burning of a probe are prevented, highly reliable wafer level burn-in method and system can be provided.
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申请公布号 |
KR20080037649(A) |
申请公布日期 |
2008.04.30 |
申请号 |
KR20087000225 |
申请日期 |
2008.01.04 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SEGAWA TERUTSUGU;SANADA MINORU |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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