发明名称 WAFER-LEVEL BURN-IN METHOD AND WAFER-LEVEL BURN-IN SYSTEM
摘要 A temperature regulation plate (106) is divided into at least two areas, a heater (408) for applying a temperature load in correspondence with such areas and its control system are divided and controlled independently to set temperatures, and a cooling source is controlled by comparing the measurements from temperature sensors (409) arranged in respective areas for controlling the heater (408) and switching the measurement for calculating the control output sequentially thus reducing variation in in-plane temperature of a wafer due to heating when an electric load is applied. Since consumption and burning of a probe are prevented, highly reliable wafer level burn-in method and system can be provided.
申请公布号 KR20080037649(A) 申请公布日期 2008.04.30
申请号 KR20087000225 申请日期 2008.01.04
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 SEGAWA TERUTSUGU;SANADA MINORU
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项
地址
您可能感兴趣的专利