SILICIDED POLYSILICON SPACER FOR ENHANCED CONTACT AREA

摘要

A silicided poly silicon spacer for an enhanced contact area is provided to perform a photolithography process and an etching process at a time, to reduce silicide resistance, and to form a successive silicide etch stop layer by using a source/drain contact region adjacent to a gate contact region and increasing a silicide region. A gate structure is formed on a semiconductor substrate(100) on which gate conductors(112a,112b), an STI structure(106), and an ion implantation region are formed. A polysilicon spacer(122) is formed adjacent to each side of the gate conductors. A height of one of the poly silicon spacers is lower than that of the adjacent gate conductor. A conductive silicide(128) is formed on the polysilicon spacer to extend a source/drain contact region. When the gate structure is formed, a pad oxide layer is formed on the semiconductor substrate. A pad nitride layer is formed on the pad oxide layer. The pad nitride layer is patterned to form the STI structure.