| 摘要 |
A SEMICONDUCTOR LASER DEVICE COMPRISES A LAMINATE CONSISTING OF A SEMICONDUCTOR LAYER OF FIRST CONDUCTIVITY TYPE, AN ACTIVE LAYER (3) AND A SEMICONDUCTOR LAYER OF SECOND CONDUCTIVITY TYPE, WHICH IS DIFFERENT FROM THE FIRST CONDUCTIVITY TYPE, THAT ARE STACKED IN ORDER, WITH A WAVEGUIDE REGION BEING FORMED TO GUIDE A LIGHT BEAM IN A DIRECTION PERPENDICULAR TO THE DIRECTION OF WIDTH BY RESTRICTING THE LIGHT FROM SPREADING IN THE DIRECTION OF WIDTH IN THE ACTIVE LAYER (3) AND IN THE PROXIMITY THEREOF, WHEREIN THE WAVEGUIDE REGION HAS A FIRST WAVEGUIDE REGION (201), AND A SECOND WAVEGUIDE REGION (202), THE FIRST WAVEGUIDE REGION (201) IS A REGION WHERE LIGHT IS CONFINED WITHIN THE LIMITED ACTIVE LAYER (3) BY MEANS OF A DIFFERENCE IN THE REFRACTIVE INDEX BETWEEN THE ACTIVE LAYER (3) AND THE REGIONS ON BOTH SIDE OF THE ACTIVE LAYER (3) BY LIMITING THE WIDTH OF THE ACTIVE LAYER (3), AND THE SECOND WAVEGUIDE REGION (202) IS A REGION WHERE THE LIGHT IS CONFINED THEREIN BY PROVIDING EFFECTIVE DIFFERENCE IN REFRACTIVE INDEX IN THE ACTIVE LAYER (3).(FIG 1A) |
