| 摘要 |
<p>An electronic device is provided to improve the performance of field effect mobility of a transistor by using a semiconductor polymer having two thienylene functions. A TFT(Thin Film Transistor)(10) comprises a substrate(16) in contact therewith a gate electrode(18), and an insulating dielectric layer(14) with the gate electrode having a portion thereof or the entire gate in contact with the dielectric layer on top of which layer source and drain electrodes(20,22) are deposited. A layer(12) is over and situated between the source and drain electrodes, comprised of a poly(dithienylbenzo[1,2-b:4,5-b']dithiophene) semiconductor, poly(4,8-didodecyl-2,6-bis-(3-methyl-thiophen-2-yl)-benzo[1,2-b;4,5-b']di-thiophene), wherein n is 23, or poly(4,8-dihexyl-2,6-bis-(3-hexyl-thiophen-2-yl)-benzo[1,2-b:4,5-b']dithi-ophene), where n is 24.</p> |
