Method of manufacturing a semiconductor device with multiple dielectrics

摘要

A method is disclosed of manufacturing a semiconductor device with at least a first dielectric material (202) and a second dielectric material (203). The method providing a first dielectric material (202) on a substrate (200); providing a patterned sacrificial layer (204) covering the first dielectric material (200) in at least a first region (210a) of the substrate (200); providing a second dielectric material (203) covering the patterned sacrificial layer (204) in the first region (210a) and covering the first dielectric material (202) in at least a second region (210b), the second region (210b) being different from the first region (210a); patterning the second dielectric material (203) such that the patterned second dielectric material (203) covers the first dielectric material (202) in the second region (210b) but not the patterned sacrificial layer (204) in the first region (210a); and removing the patterned sacrificial material (204). Next, a first and/or second electrode (206, 508) may be provided. Additionally a third dielectric material (307) may be provided. The second and third dielectric material (203, 307) may serve for tuning the workfunction of the first and/or second electrode (206, 508) of the semiconductor device.