METHOD OF MANUFACTURING FLASH MEMORY DEVICE

摘要

A method for manufacturing a flash memory device is provided to enhance performance of the flash memory device by reducing a contact area between a floating gate and a tunnel oxide layer and improving a contact area between the floating gate and an ONO layer. An isolation pattern(2) is formed on an active region of a semiconductor substrate(1). A tunnel oxide layer pattern is formed selectively on the active region. A polysilicon pattern(5) having a sidewall and an upper surface connected to the sidewall is formed on a tunnel oxide layer(3). A metastable polysilicon growth layer(6) having an embossing shape is formed on a surface of the polysilicon pattern to increase the surface area of the polysilicon pattern. An ONO layer(8) is formed to cover the metastable polysilicon growth layer. A control gate(9) is formed on the ONO layer. The metastable polysilicon growth layer is formed on the sidewall and the upper surface.