| 摘要 |
<p>An exposure apparatus (100E) for exposing a pattern of a mask (142) onto an object comprises a projection optical system (160) configured to project the pattern of the mask onto the object; and a measuring apparatus (101H) configured to measure optical performance of said projection optical system. The measuring apparatus (101H) is a point diffraction interferometer that has a pinhole or a line diffraction interferometer that has a slit, wherein said measuring apparatus includes a transparent substrate that has the pinhole or the slit at one side of the transparent substrate, and a light splitter at the other side of the transparent substrate.</p> |
