发明名称 MEMORY SYSTEM INCLUDING FLASH MEMORY AND PROGRAM METHOD THEREOF
摘要 A memory system including a flash memory and a programming method thereof are provided to back up an LSB(Least Significant Bit) and to correct or repair a lost LSB. A memory system comprises a flash memory(130) and a memory controller(120). The flash memory stores an LSB and an MSB(Most Significant Bit) in a memory cell. The memory controller includes a buffer memory(121) for temporarily storing the LSB and the MSB and a backup memory for backing up the LSB. The memory controller backs up the LSB stored in the flash memory when a bit program fails, compares the MSB, read from the flash memory, with the MSB, stored in the buffer memory for detecting a fail position, and recovers the LSB stored at the backup memory by referring to the fail position.
申请公布号 KR20080035353(A) 申请公布日期 2008.04.23
申请号 KR20060101954 申请日期 2006.10.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, JIN HYEOK
分类号 G06F12/16 主分类号 G06F12/16
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