POST-SILICIDE SPACER REMOVAL

摘要

A method for removing a post silicide spacer is provided to improve the reliability of a transistor by removing a spacer without influencing silicide. A gate conductor(102) is formed on a substrate(108). A spacer(104) is formed on the sidewall of the gate conductor. Impurities are implanted into an exposed region of the substrate not protected by the gate conductor and the spacer. Silicide(112) is formed on the surface of the exposed region of the substrate. A passivation layer(114) is formed on the silicide, the spacer and the gate conductor. A sacrificial layer(116) is formed on the passivation layer, including a relatively thin region on the spacer and a relatively thick region on the substrate. The sacrificial layer is partially etched in a manner that the relatively thin region of the sacrificial layer on the spacer is completely removed and the relatively thick region of the sacrificial layer on the substrate is not removed, so that a region of the passivation layer covering the spacer is exposed. The region of the passivation layer covering the spacer is removed in a manner that the spacer is exposed and the silicide is not exposed. The spacer is eliminated without influencing the silicide. The process for removing the passivation layer covering the spacer can include a selective etch process in which a protection material is removed and a sacrificial material is not.