| 摘要 |
A semiconductor device including a floating electrode is provided to effectively control a parasitic operation by extending an interval between fourth and third semiconductor regions as compared with the width of the fourth semiconductor region. A first semiconductor region(1) of a first conductivity type is two-dimensionally extended. A second semiconductor region(2a,5a) of a second conductivity type is disposed on the first semiconductor region. A third semiconductor region(2c,5c) of a second conductivity type is disposed on the first semiconductor region, separated from the second semiconductor region. A fourth semiconductor region of the second conductivity type is disposed on the first semiconductor region, positioned between the second and third semiconductor regions and separated from the second and third semiconductor regions. A fifth semiconductor region of the first conductivity type is disposed on the first semiconductor region, positioned between the third and fourth semiconductor regions and having lower resistance than that of the first semiconductor region. A first electrode comes in contact with the second semiconductor region. A second electrode comes in contact with the third semiconductor region. A third electrode is formed between the second and fourth semiconductor regions. The fourth and fifth semiconductor regions are electrically connected by a conductive member. The interval between the fourth and third semiconductor regions is lengthened as compared with the width of the fourth semiconductor region. A groove part can be formed between the second and third semiconductor regions. The fourth semiconductor region can be formed along the wall surface of the groove part.
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