COMPOSITIONALLY-GRADED PHOTOVOLTAIC DEVICE AND FABRICATION METHOD, AND RELATED ARTICLES

摘要

A semiconductor structure is described, including a semiconductor substrate of one conductivity type; and an amorphous semiconductor layer disposed on at least one of its surfaces. The amorphous semiconductor layer is compositionally graded through its depth, from substantially intrinsic at the interface with the substrate, to substantially conductive at the opposite side. Photovoltaic devices which include such a structure are also disclosed, as are solar modules made from one or more of the devices. Related methods are also described.