发明名称 PROTECTIVE FILM STRUCTURE OF METAL MEMBER, METAL COMPONENT EMPLOYING PROTECTIVE FILM STRUCTURE, AND EQUIPMENT FOR PRODUCING SEMICONDUCTOR OR FLAT-PLATE DISPLAY EMPLOYING PROTECTIVE FILM STRUCTURE
摘要 <p>Multifunction production equipment enabling a plurality of processes in which deposition of reaction products on the inner wall of the processing chamber of equipment for producing a semiconductor or a flat-plate display, metal contamination due to corrosion of the inner wall, or the like, and fluctuation of the process due to discharged gas are suppressed, and a protective film structure for use therein. On the surface of a metal material, a first coating layer having an oxide coating of 1 µ thick or less formed as an underlying layer by direct oxidation of a parent material, and a second coating layer of about 200µm thick are formed. With such an arrangement, corrosion resistance against irradiation with ions or radicals can be imparted to a second layer protective film, and the effect of a protective layer for preventing corrosion of the surface of parent metal caused by diffusing molecules or ions into the second layer protective film can be imparted to the first layer oxide film. Consequently, contamination of the substrate with metals generated from each metal member and the inner surface of the process chamber is reduced, and stripping of the second layer protective film due to lowering in adhesion of the second layer protective film due to corrosion of the interface between the parent material and the second layer protective film can be suppressed.</p>
申请公布号 EP1914330(A1) 申请公布日期 2008.04.23
申请号 EP20060766798 申请日期 2006.06.16
申请人 TOHOKU UNIVERSITY;MITSUBISHI CHEMICAL CORPORATION;NIHON CERATEC CO., LTD. 发明人 OHMI, TADAHIRO;SHIRAI, YASUYUKI;MORINAGA, HITOSHI;KAWASE, YASUHIRO;KITANO, MASAFUMI;MIZUTANI, FUMIKAZU;ISHIKAWA, MAKOTO;KISHI, YUKIO
分类号 C23C28/00;C23C8/10;C25D11/08;C25D11/10;C25D11/16;C25D11/18;H01L21/205;H01L21/3065 主分类号 C23C28/00
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