| 摘要 |
<p>This invention refers to a method for manufacturing SOI wafers by combination of ion implantation with bonding process, wherein one forms an etch-stop layer by adopting ion implantation process, then bond the device wafer and handle wafer together, thin the device wafer to certain thickness and use the implanted layer in device wafer as etch stop layer, from where the etch automatically stops when one use chemicals etches the device wafer. Subsequently one does fine polishing with or oxidizes the remaining silicon to obtain an SOI wafer. Under this invention, the thickness of buried oxide can be adjusted in a wider range while the ion implanted layer acting as etch stop layer can help precisely control the thickness and uniformity of active layer, which enhances the uniformity of active layer and facilitates the adjustment of buried oxide layer.</p> |
