| 摘要 |
<p>A method for forming a semiconductor device is provided to improve the quality of an IMD oxide layer by removing voids in a deposition process. A metal layer is formed on a substrate. A hard mask layer is formed on the metal layer. A photoresist pattern is formed on an upper surface of the hard mask layer. A hard mask is formed by etching the hard mask layer by using a mixed gas of CF4/Cl2 of 10-20 sccm and CHF3/Cl2 of 10-20 sccm. A metal pattern is formed by etching the metal layer by using a mixed gas of BCl3/Cl2 of 100-150 sccm. In the process for forming the hard mask, an oxide polymer is removed by using a wet-etch method. In the metal etch process, a metal polymer is removed by using the wet-etch process.</p> |
