发明名称
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for an active matrix type liquid crystal display device wherein light leakage in the vicinity of a pixel electrode can be prevented. <P>SOLUTION: The manufacturing method comprises a stage for forming a wiring and then forming a transparent insulation film 20 on an array substrate 10, a stage for performing dry process etching of the insulation film so that the insulation film having film thickness whose ratio to the film thickness of the wiring is≥0.5 and≤1.0 is left on the surface on the wiring side and a stage for performing wet process etching of only the wiring having film thickness whose ratio to the film thickness of the wiring is≤0.2, in the active matrix type liquid crystal display device wherein array of liquid crystal molecules is changed by generating an electric field nearly parallel to the array substrate. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP4080732(B2) 申请公布日期 2008.04.23
申请号 JP20010363175 申请日期 2001.11.28
申请人 发明人
分类号 G02F1/1333;G02F1/1343;G02F1/1368;H01L21/336;H01L29/786 主分类号 G02F1/1333
代理机构 代理人
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