| 摘要 |
<p>A semiconductor light emitting device is provided to avoid a decrease of a light intensity by eliminating the necessity for mounting an over-voltage protection device of a discrete state on a semiconductor light emitting device package. A semiconductor light emitting device includes an n-type semiconductor layer(130), an active layer(140) and a p-type semiconductor layer(150). An n-side electrode(185) is formed on the n-type semiconductor layer. An over-voltage protection layer(190) is formed on the n-side electrode. The over-voltage protection layer can include a first metal layer(192) formed on the n-side electrode, a metal oxide layer(194) formed on the first metal layer, and a second metal layer(196) formed on the metal oxide layer.</p> |
