| 摘要 |
A gallium nitride wafer (11) has a substantially circular shape. The gallium nitride wafer (11) is provided with a plurality of stripe regions (13), a plurality of single crystal regions (15) and a visible mark (17). Each stripe region (13) exhibits a direction of axis and extends in a direction of a prescribed axis. Each stripe region (13) is sandwiched between the single crystal regions (15). The mark (17) is arranged at least on a front plane (11a) or a rear plane (11b) of the gallium nitride wafer (11), and has visible size and shape. The dislocation density of the stripe region (13) is higher than that of the single crystal region (15), and the crystal orientation of the stripe region (13) is different from that of the single crystal region (15). |
