| 摘要 |
In a semiconductor laser element, a lower cladding layer of AlGaInP of the first conductive type, a lower optical waveguide layer of AlGaInP, a quantum-well active layer of InGaP, an upper optical waveguide layer of AlGaInP, and an upper cladding layer of AlGaInP of the second conductive type are formed in this order on a substrate of GaAs of the first conductive type. The degree of mismatch Deltaa/a with the substrate and the thickness dw of the quantum-well active layer satisfy the conditions, -0.6%<=Deltaa/a<=-0.3% and 10 nm<=dw<=20 nm. In addition, the resonator length Lc and the reflectances Rf and Rr of the opposite end facets satisfy the conditions, Lc>=400 mum and RfxRr>=0.5.
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