发明名称 Method of manufacturing a thin film transistor, thin film transistor, thin film transistor circuit, electronic device, and electronic apparatus
摘要 Aspects of the invention can provide a method of manufacturing a thin film transistor capable of manufacturing a high-performance thin film transistor with a simple process, a thin film transistor manufactured using the method of manufacturing a thin film transistor, and a thin film transistor circuit, an electronic device, and an electronic apparatus each equipped with the thin film transistor. The method of manufacturing a thin film transistor according to the invention can include the first step of forming a source electrode and a drain electrode on a substrate by an electroless plating process, the second step of forming an organic semiconductor layer in at least an area between the source electrode and the drain electrode using a costing method, the third step of forming a gate insulating layer on the organic semiconductor layer using a coating method, and the fourth step of forming a gate electrode using a coating method so as to overlap an area on the gate insulating layer and between the source electrode and the drain electrode.
申请公布号 US7361594(B2) 申请公布日期 2008.04.22
申请号 US20040988634 申请日期 2004.11.16
申请人 SEIKO EPSON CORPORATION 发明人 KAWASE TAKEO;HARADA MITSUAKI;KIMURA SATOSHI;FURIHATA HIDEMICHI
分类号 H01L21/28;H01L21/44;C23C18/16;C23C18/18;C23C18/31;C25D3/00;G02F1/1368;G02F1/167;H01L21/20;H01L21/288;H01L21/336;H01L29/417;H01L29/423;H01L29/49;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L21/28
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