发明名称 |
Method of manufacturing a thin film transistor, thin film transistor, thin film transistor circuit, electronic device, and electronic apparatus |
摘要 |
Aspects of the invention can provide a method of manufacturing a thin film transistor capable of manufacturing a high-performance thin film transistor with a simple process, a thin film transistor manufactured using the method of manufacturing a thin film transistor, and a thin film transistor circuit, an electronic device, and an electronic apparatus each equipped with the thin film transistor. The method of manufacturing a thin film transistor according to the invention can include the first step of forming a source electrode and a drain electrode on a substrate by an electroless plating process, the second step of forming an organic semiconductor layer in at least an area between the source electrode and the drain electrode using a costing method, the third step of forming a gate insulating layer on the organic semiconductor layer using a coating method, and the fourth step of forming a gate electrode using a coating method so as to overlap an area on the gate insulating layer and between the source electrode and the drain electrode.
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申请公布号 |
US7361594(B2) |
申请公布日期 |
2008.04.22 |
申请号 |
US20040988634 |
申请日期 |
2004.11.16 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KAWASE TAKEO;HARADA MITSUAKI;KIMURA SATOSHI;FURIHATA HIDEMICHI |
分类号 |
H01L21/28;H01L21/44;C23C18/16;C23C18/18;C23C18/31;C25D3/00;G02F1/1368;G02F1/167;H01L21/20;H01L21/288;H01L21/336;H01L29/417;H01L29/423;H01L29/49;H01L29/786;H01L51/05;H01L51/40 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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