发明名称 FILM FORMING COMPOSITION FOR NANOIMPRINTING AND METHOD FOR PATTERN FORMATION
摘要 This invention provides a film forming composition for nanoimprinting, which has excellent resistance to etching with oxygen gas, can prevent the separation of a transfer pattern, can eliminate a problem of a holing time on a substrate, and is also excellent in transferability, and photosensitive resist, a nanostructure, a method for pattern formation using the same, and a program for realizing the method for pattern formation. The film forming composition for nanoimprinting comprises a polymeric silicon compound having the function of causing a photocuring reaction. Preferably, the polymeric silicon compound has a functional group cleavable as a result of response to electromagnetic waves and causes a curing reaction upon exposure to electromagnetic waves. More preferred are siloxane polymer compounds, silicon carbide polymer compounds, polysilane polymer compounds, and silazane polymer compounds, or any mixture thereof.
申请公布号 KR20080034983(A) 申请公布日期 2008.04.22
申请号 KR20087005525 申请日期 2008.03.06
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 SAKAMOTO YOSHINORI;YAMASHITA NAOKI;ISHIKAWA KIYOSHI
分类号 G03F7/035;B29C59/02 主分类号 G03F7/035
代理机构 代理人
主权项
地址